SEMICONDUCTIVE ELECTRON EMISSION ELEMENT

摘要

PURPOSE:To provide a semiconductive electron emission element which has large operation speed and is capable of reducing generation of heat caused by Joule heat inside of the element. CONSTITUTION:A semiconductive electron emission element is provided with Schottky barrier junction on the surface of a P type semiconductive layer 104, a P type semiconductive area 106 having high density to cause avalanche amplification under an electrode 110 forming the Schottky barrier junction in its P type semiconductive layer 104, and an area 103 which is situated in the vicinity of this P type semiconductive area having high density and does not come into contact with the electrode 110 forming the Schottky barrier junction and has specific resistance smaller than that of the P type semiconductive layer 104.