| 摘要 |
PURPOSE:To increase a capacity of stacked cells by alternately depositing layers each having a fast etching speed and layers each having a slow etching speed to form a polysilicon film, and thereby forming a storage node having an uneven part on its side. CONSTITUTION:After a base silicon oxide film 1 is formed by a CVD method, oxygen-doped polysilicon films 2 and polysilicon films 3 are alternately deposited on an entire surface to form a laminated film. A desired pattern of a photoresist film 4 is formed on the film 3. Since the film 2 has a slow etching speed, it is etched as the pattern of the film 4, but since the film 3 has a fast etching speed, side etching occurs to form a shape having a side inside the film 2. |
