DISPOSITIVO DI MEMORIA A SEMICONDUTTORE E RELATIVO METODO DI FABBRICAZIONE.,申请号IT1991MI01513-传众专利搜索

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发明名称	DISPOSITIVO DI MEMORIA A SEMICONDUTTORE E RELATIVO METODO DI FABBRICAZIONE.
摘要
申请公布号	ITMI911513(A1)	申请公布日期	1992.09.21
申请号	IT1991MI01513	申请日期	1991.06.04
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM JONG-BOK;LEE KYU-PIL;PARK YONG-JIK
分类号	H01L27/10;H01L;H01L21/8242;H01L27/108	主分类号	H01L27/10
代理机构		代理人
主权项
地址

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