| 摘要 |
PURPOSE:To provide a semiconductor device and a manufacturing method thereof in which the capacitance of a capacitor of a MOS DRAM can be increased in a structure of a capacitor of a dynamic MOS memory cell and a forming method thereof. CONSTITUTION:In a semiconductor device having a capacitor in which a lower electrode and an upper electrode are opposed through a capacitor insulating film, the lower electrode is formed of one or a plurality of cylindrical electrode films 10, 12, 14 connected to a lower electrode film 8, and the upper electrode is formed oppositely to the films 10, 12, 14 through a capacitor insulating film 15 covering the surfaces of the films 10, 12, 14. |
