| 摘要 |
PURPOSE:To contrive to enhance light-fetching efficiency and uniformity of a light-emitting output without impairing high reliability and high reproduction in a light-emitting diode array. CONSTITUTION:N-GaAs buffer layers 12, 25, a pair of N-AlGaAs/N-Al As semiconductor multi-layer reflection mirror 13, a PAl GaAs light-emitting layer 14, a P-AlGaAs clad layer 15, and a P<+>-GaAs contact layer 16 are succesively laminated on an N-GaAs substrate 11, and a surface of a light-emitting part is processed in a sawtooth-like manner by a chemical etching to form an entire reflection preventing surface 21. An entire reflection loss of the light derived from the light-emitting layer 14 by the sawtooth-like entire reflection preventing surface 21 is considerably reduced, and also the light which advances in the reverse direction to a light fetching surface by a semiconductor multi-layer reflection mirror 13 can be fetched with good efficiency. |
