| 摘要 |
PURPOSE:To enable silylation to be conducted at room temp. and to form good fine patterns by silylating a resist by using a silylating agent contg. imidazole to be a catalyst for silylation or its deriv. CONSTITUTION:The polyimide resist 2 to form a lower layer resist is applied on a semiconductor substrate 1 and thereafter, a novolak resist 3 to form an upper layer resist is applied thereon. The upper layer resist 3 is then subjected to exposing and developing to form patterns and thereafter, the silylating agent 7 prepd. by incorporating the imidazole into, for example, chlorotrimethyl silane is sprayed at room temp. to form a silylated layer 9 on the surface of the upper layer resist 3. The fine patterns 10 are then formed by RIE etching using gaseous O2 plasma with the silylating layer 9 as a mask. |
