发明名称 PRODUCTION OF THIN-FILM TRANSISTOR MATRIX
摘要 <p>PURPOSE:To enhance the reliability of drain terminals for connecting drivers for driving and to prevent the breakdown of TFTs by static electricity during process. CONSTITUTION:This production has a stage for forming gate electrodes 3G and gate bus lines 3 by depositing a gate electrode film on a transparent insulating substrate and patterning this film, a stage for depositing a gate insulating film, an operating semiconductor film, a channel protective insulating film, and a semiconductor film for contact, a stage for forming drain electrodes 4D and drain bus lines 4 by depositing a drain electrode film and patterning this film, a stage for forming picture element electrodes 2 by depositing a transparent conductive film and patterning this film, and a stage for forming gate terminals 3B for connecting the drivers for driving and drain terminals 4B by exposing the ends of the gate bus lines 3 upon ending of all the above- mentioned stages and depositing a conductive film on the circuit board, then patterning the conductive film.</p>
申请公布号 JPH04263222(A) 申请公布日期 1992.09.18
申请号 JP19910022560 申请日期 1991.02.18
申请人 FUJITSU LTD 发明人 INOUE ATSUSHI;ICHIMURA TERUHIKO
分类号 G02F1/136;G02F1/1368;G09G3/36 主分类号 G02F1/136
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