| 摘要 |
PURPOSE:To dispense with processes where LED elements are arranged and fixed onto a substrate and metal fine wires are bonded and to enable a luminous display device of high resolution to be easily obtained by a method wherein LED elements are epitaxially grown direct on a non-doped semi-insulating GaP substrate. CONSTITUTION:LED elements are epitaxially grown direct on a non-dope semi- insulating GaP substrate 1, where the non-doped semi-insulating GaP substrate is made to serve as an insulating layer between the LED elements. For instance, a non-doped N-type GaP epitaxial layer 2 is made to grow on the non-doped semi-insulating GaP substrate 1 through a liquid epitaxial growth method so as to be buried in the substrate 1. Then, a zinc-doped P-type GaP epitaxial layer 3 is made to grow the same as the N-type epitaxial layer 2. An electrode wiring 4 of gold-zinc alloy is provided to the P-type epitaxial layer 3, and an electrode wiring 5 of gold-silicon alloy is provided onto the N-type epitaxial layer 5. A silicon dioxide film 6 is provided to a part where the wirings 4 and 5 overlap each other. |
