| 摘要 |
PURPOSE:To obtain a mask for exposure with a less pattern distortion. CONSTITUTION:The surface of a metal film 4 formed on a silicon nitride film 2 is silicided to form a metal silicide film 4a on the metal film 4 and the resulting patternable material consisting of the films 4, 4a is patterned. The film 4 is straightened by the cubical expansion of the film 4a and the patternable material is made flat, accordingly a pattern for exposure obtd. by patterning the patternable material is hardly distorted. |
