| 摘要 |
PURPOSE:To enable an optical neuro chip where a large number of neurons are highly integrated to be manufactured stably by producing a light-receiving part, a mask layer, and a light-emitting part in one piece continuously, miniaturizing the neurons by improving an alignment accuracy between constituting parts by photolithography in manufacturing a basic device structure of the optical neuro chip consisting of the light-emitting part, the mask layer, and the light-emitting part. CONSTITUTION:A light-receiving portion is formed by providing an n-type region 3 on a surface of a p-type semiconductor substrate 1, a gate 5 is formed within a layer insulating film 4 which is deposited on a semiconductor substrate 1, and then a light-emitting diode 6 consisting of an amorphous semiconductor is formed on the layer insulating film 4 by using the CVD method and then controlling a dopant gas. Further, a nonvolatile memory structure in EEPROM or MNOS structure is formed between the gate 5 and the semiconductor substrate 1 and then a weight memory function is added. |
