Heat treatment of Si single crystal.

摘要

The method of this Invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150 DEG C to 1,280 DEG C a wafer cut out of the SI single crystal thereby producing a Si wafer excellent in oxide film dielectric breakdown voltage characteristic due to elimination of crystal defects. Consequently, this invention ensures production of LSI in a high yield. <IMAGE>