| 摘要 |
<p>A FEC-DRAM of 3 elements/2 bits type having a stacked capacitor of increased capacitance to ensure integration with an increased density. The stacked capacitor is formed as embedded in a trench, and local wiring is provided to form an electric contact on an element isolation region. When required, the stacked capacitor is made to extend onto a word line region.</p> |
