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发明名称
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY CONTROLLING THE PROFILE OF THE DENSITY OF P-TYPE IMPURITIES IN THE SOURCE/DRAIN REGIONS
摘要
申请公布号
US5147811(A)
申请公布日期
1992.09.15
申请号
US19910666912
申请日期
1991.03.11
申请人
KABUSHIKI KAISHA TOSHIBA
发明人
SAKAGAMI, EIJI
分类号
H01L21/265;H01L21/336;H01L27/115;H01L29/08;H01L29/10
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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