METHOD OF MICROAREA ANALYSIS WITH A FOCUSED CESIUM ION BEAM

摘要

Cs LMIS with pure Cs or a cesium compound as a source material is specifically employed in a FIB so that the total ion current IT at the time of ion emission is not greater than 5 mu A, whereby the current density distribution of a Cs FIB exhibits a sharp peak and the tailing of the distribution is reduced. By setting the IT in the range of 0.1 to 2 mu A, a high current density of a Cs+ FIB whose diameter is 0.1 mu m is formed. The FIB is particularly used in secondary ion mass spectrometry analysis of a semiconductor material in electronic device manufacturing.