| 摘要 |
A method of applying an alloy layer of predetermined thickness on a semiconductor wafer to fill contact openings having a defined diameter, the method comprising the following steps: chemical vapor depositing (CVD) a layer of elemental metal atop the wafer to a thickness of from 5% to 35% of the defined contact diameter; sputtering a layer of an alloy atop the chemical vapor deposited layer of elemental metal to a thickness which results in the combination of the chemical vapor deposited and sputtered layers having substantially the predetermined overall layer thickness; and combining and intermixing the sputtered alloy layer with the chemical vapor deposited elemental metal layer to form an overall homogenous alloy layer by applying energy to the sputtered alloy layer, the application of energy also filling contact openings and planarizing the homogenous layer. Preferably, the CVD layer has a thickness of from 10% to 20%, and the energy is applied by a scanning pulsed laser.
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