发明名称 |
Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structure |
摘要 |
The invention comprises an improvement in the process wherein a polysilicon layer, which is formed over a step on an integrated circuit structure and masked with a photoresist, is anisotropically etched to remove the exposed portions of the polysilicon layer leaving sidewall residues of a polymerized silicon/oxide-containing material adjacent the polysilicon lines. The improvement comprises treating the integrated circuit substrate with an aqueous hydroxide/peroxide solution to remove the residues of polymerized silicon/oxide-containing material, without undercutting the remaining polysilicon.
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申请公布号 |
US5147499(A) |
申请公布日期 |
1992.09.15 |
申请号 |
US19910735127 |
申请日期 |
1991.07.24 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SZWEJKOWSKI, CHESTER;LATCHFORD, IAN S.;NAMOSE, ISAMU;TSUCHIDA, KAZUMI |
分类号 |
H01L21/02;H01L21/3213 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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