| 摘要 |
PURPOSE:To provide a GaAlAs wafer for a p-n junction light-emitting diode, capable of emission at a p-type epitaxial GaAlAs layer with an n-type GaAs substrate remaining unremoved, while having good crystallinity at the p-n junction for improved emission efficiency. CONSTITUTION:An n-type GaAs substrate 1 is doped with silicon, acting as both acceptor and donor, so that an n-type GaAlAs substrate 1 and a p-type GaAlAs substrate 2 are formed to provide a p-n junction on the substrate. The growth rate of the p-epitaxial GaAlAs layer 3 is controlled so that the band gap energy at the layer 3 may become greater than the photon energy derived from emission of light at the forward-biased p-n junction. The temperature at which n-type GaAlAs changes to p-type GaAlAs is selected to be at 890 deg.C. |
