SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To nearly equalize the portion of the voltage change in read/write node when the stored information of each capacitor of a cascade gate type memory cell is successively read out. CONSTITUTION:A first MOS transistor Q1 whose one end is connected to the read/write node, a plural number of second MOS transistors Q2-Q4 which are serially connected to the other end of the first MOS transistor, and the capacitors for information storage C1-C4 whose one ends are each connected with the other ends of the above MOS transistors are provided; it is also a characteristic that certain regulation is given to the relation of the capacities of these capacitors C1-C4.