| 摘要 |
<p>PURPOSE:To provide a non-volatile semiconductor memory device which has adequately fast write and read speed, is free from restriction of read frequency, enables adequate polarization, is resistant to noises and has less leak current. CONSTITUTION:A structure which is provided with a P-well region 2, a ferroelectrics film 7 formed on a main surface of the P-well region 2, an electrode 5 formed on the ferroelectric film 7 and P<+>-regions 12, 13 formed at one end side and the other end side of the ferroelectric film 7.</p> |
