| 摘要 |
PURPOSE:To increase the photoelectric transfer efficiently and the durability by getting a compound seniconductor which is constituted of at least one element selected from group III elements of the periodic table and nitrogen that has a specified forbidden band width or over to serve as a transparent electrode. CONSTITUTION:A compound semiconductor which is constituted of at least one element selected from group III element of the periodic table and nirtogen that has a forbidden band width of 3eV or over serves as a transpalent electrode. For example, a p-type layer, i-type layer and n-type layer are formed in this order as amorphous semiconductor layers. The p-type layer is a p:a-Si layer 3 which is formed using diborane gas, the i-type layer is an i:a-Si layer 4 which is formed using silane gas and the n-type layer is an n:a-Si layer 5 which is formed using phosphine gas. These three layers are laminated in order. Then, metal Ga is evaporated in an ammonia atmosphere to form a GaN layer 6 on top of the laminated layers. When a forbidden band width of the GaN transparent conductive film is measuired, it is found to be 3.19eV. |
