摘要 |
PURPOSE:To obtain a voltage non-linear resistor which is excellent in charged lifetime, discharge strength, limit voltage, change rate of limit voltage after surge impressing, and hygroscopic characteristic. CONSTITUTION:The title resistor consists mainly of zinc oxide, contains 0.3-1.5mol% of bismuth oxide in Bi2O3 conversion, 0.3-1.5mol% of cobalt oxide in Co2O3 conversion, 0.2-1.5mol% of manganese oxide in MnO2 conversion, 0.5-1.5mol% of antimony in Sb2O3 conversion, 0.1-1.5mol% of chromium oxide in Cr2O3 conversion, 4.0-10.0mol% of silicon oxide in SiO2 conversion, 0.5-2.5% of nickel oxide in NiO conversion, 0.001-0.05mol% of boron oxide in B2O3 conversion, 0.0001-0.05mol% of silver oxide in Ag2O conversion, and 0.0005-0.1mol% of zirconium oxide in Ag2O conversion with the crystal phase of bismuth oxide in a resistor incorporating at least gamma-type crystal phase, where 30wt% or more of bismuth oxide is gamma-type. |