| 摘要 |
PURPOSE:To enhance the dielectric breakdown strength between an upper-part electrode for a capacitor and a bit-line contact part at a memory cell for a DRAM. CONSTITUTION:An upper-part electrode 14 for a capacitor 6 constitutes its edge 14a, at a position faced with a bit-line contact part, in a position which is retreated from the edge 16a of a first interlayer insulating layer 16 with which the surface of the upper-part electrode layer 14 is covered. The side face from which the upper-part electrode layer 14 is retreated and the side face of the first interlayer insulating layer 16 are covered with a sidewall insulating layer. The bit-line contact part or a pad layer 18 for the bit-line contact is formed along the surface of the sidewall insulating layer. The sidewall insulating layer is formed in such a way that its film thickness is thick by the portion at which the upper-part electrode 14 for the capacitor 6 is retreated first interlayer insulating film 16. Thereby, the distance between the upper-part electrode 14 for the capacitor 6 and the bit-line contact is increased, and the dielectric breakdown strength between both is enhanced. |
