| 摘要 |
PURPOSE:To thin off the silicon oxide film formed between a tantalum oxide film and an Si substrate by successively increasing the intensity of high frequency, to be used for formation of plasma, by changing the frequency in a plurality of stages. CONSTITUTION:After a tatalum chloride cylinder 108, which is a solid source, has been heated up and its temperature has been adjusted, tantalum chloride, which is the source of material, is introduced into a plasma reaction chamber 101 by Ar carrier gas. Dinitrogen monooxide is mixed with tantalum chloride gas immediately before its introduction into the plasma reaction chamber 101 from a dinitrogen monooxide cylinder 109. An Si substrate 111 is heated up. The RF power to be used for formation of plasma, which is used to form a film, is allowed to change by three stages. To be more precise, the power of 0.1W/cm<2> for the first 60 seconds, the power of 0.2W/cm<2> for subsequent 30 seconds, and the power of 0.5W/cm<2> for the last 100 seconds are applied between a plasma electrode 102 and a susceptor 103 using an RF controller 120 and an RF generator 104, and an Si substrate is formed. |
