发明名称 A MULTILAYER STRUCTURE AND ITS FABRICATION METHOD
摘要 <p>A multilayer structure with a first electrically conductive pattern (2); an insulative layer (4) formed over the first electrically conductive pattern (2); a second electrically conductive pattern (3) formed on said insulative layer (4); and an electrically conductive pin (5) piercing the insulative layer (4) so as to connect said first (2) and second (3) electrically conductive layers, an end (5A) of said pin (5) being cold-welded to said first electrically conductive pattern (2), another end (5B) of said pin (5) contacting said second electrically conductive pattern (3). A method of fabricating such a structure, in which the insulative layer (4) may be of organic resin which is hardened after piercing by the pin (5). <IMAGE></p>
申请公布号 AU628256(B2) 申请公布日期 1992.09.10
申请号 AU19910072052 申请日期 1991.03.01
申请人 FUJITSU LIMITED 发明人 KAZUAKI SATOH;NORITOSHI SUGAWARA
分类号 H05K3/46;H01L21/48;H01L23/538;H05K1/03;H05K3/32;H05K3/40;(IPC1-7):H05K3/46;H01L23/522 主分类号 H05K3/46
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