| 摘要 |
PURPOSE:To obtain miniaturized integrated circuit with minute electrode wiring free from ruggedness by a construction wherein an opening for an electrode and a concave portion for containing wiring are provided on an insulating film of a semiconductor substrate with a semiconductor region, and a metal is allowed to attach to the opening to provide the electrode wiring. CONSTITUTION:In a bipolar transistor, for instance, a thin oxide film 2' is made to attach to the base region on the main surface of a semiconductor substrate having collector, base and emitter regions 1, 3, 4, while a thick oxide film 2 is permitted to adhere to the periphery of the base region. Next, with a photoresist pattern 11 as a mask, an opening 6 for the emitter electrode, an opening 5 for the base electrode and a concave portion 12 in which wiring is provided are made through chemical etching. After depositing wiring metal layers 13, 13', the photoresist pattern 11 together with the metal layer 13' on the pattern are removed. By so doing, spacing between the openings of electrodes can be reduced, while a wiring layer with less ruggedness is produced, so that a compact transistor with a small parasitic capacity is obtainable. |
