发明名称 SEMI-CONDUCTOR MEMORY
摘要 <p>PURPOSE:To prevent an operating margin from reduction even in a low voltage area by obtaining the reference voltage of an internal voltage dropping power supply circuit with a signal which is internally boosted with an oscillator. CONSTITUTION:The power supply circuit is provided with an oscillator 20 consisting of a ring oscillator, etc., and a charging pump consisting of transistors Q21, Q22, and a capacitance C1. A boosted signal is supplied to a reference voltage generation part. The reference voltage Vref is obtained from one connecting point of a series of transistors Q11-Q15. In such a manner, even when an external power supply voltage is dropped, a constant voltage is always kept and the semi-conductor memory whose operating margin is not reduced even in a low voltage area is obtained.</p>
申请公布号 JPH04254987(A) 申请公布日期 1992.09.10
申请号 JP19910015048 申请日期 1991.02.06
申请人 NEC CORP 发明人 MUROTANI KITOKU
分类号 G06F1/26;G11C11/407;G11C11/413 主分类号 G06F1/26
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