| 摘要 |
PURPOSE: To provide a planarization process employing three resist layers. CONSTITUTION: After forming a CVD oxide layer on a basic layer having trenches or steps of specified height separated by a variable distance on the surface thereof, a first resist layer is formed in a wide trench. A second resist layer is formed in order to increase and totally planarize the basic layer and then it is etched back until the resist is removed entirely from the active region thereof. Subsequently, a third resist layer is formed on the basic layer in order to provide a substantially planar surface. Finally, the resist and the CVD oxide are removed entirely from the active region. |
