Non-volatile memory, semiconductor memory device having the non-volatile memory, and method of producing the semiconductor memory device.

摘要

A non-volatile memory device includes a semiconductor layer (1), floating gates (12), control gates (14), pairs of first and second impurity diffused layers (15, 16) formed in the semiconductor layer and located on both sides of the control gates. Word lines (14) are electrically connected to the control gates, and bit lines (17) are electrically connected to the first impurity diffused layers and perpendicular to the word lines. Wiring electrodes (18) are electrically connected to the second impurity diffused layers, and run in a direction in which the bit lines run. Areas (X) including the pairs of first and second impurity diffused areas are obliquely arranged with respect to the bit lines. <IMAGE>