| 摘要 |
PURPOSE:To fix the substrate potential to be uniform over the whole substrate by directly connecting the substrate potential wiring on the surface of a pellet in an IC to the substrate on the scribe line or inside the pellet. CONSTITUTION:In a region on a P type Si substrate separated by a channel stopper 42 and a field oxide film 42, an MOSFET is provided in a prescribed manner. A resist mask 49 is applied in order to etch the polycrystalline Si and SiO2 on the substrate and make it exposed. The mask 49 is removed, and a source drain wiring 60 and a substrate potential wiring 60' to directly connect the substrate and the substrate wiring are formed. By said constitution, because the substrate potential wiring 60' is formed as the scribe line on the periphery of the pellet and at the same time as the wiring inside the pellet, the substrate potential inside the pellet can be reliably fixed. In addition, it is permitted that the pellet lower surface is connected to the substrate potential at the same time. |
