| 摘要 |
PURPOSE:To reduce the cost of production of an SnO2-based semiconductor porcelain material having nonlinear resistance characteristics dependent on voltage by replacing expensive SnO2 powder with inexpensive ZnO powder. CONSTITUTION:A porcelain material having a compsn. consisting of, by molt 20-99% SnO2, 0.5-70% ZnO, 0.05-25% Sb2O5 and 0.05-15% Bi2O3 has varistor voltage, a nonlinearity coefft. and mechanical strength comparable to or higher than those of the conventional SnO2-based semiconductor porcelain material. A varistor having satisfactory characteristics can be produced at a low cost only by replacing SnO2 powder with ZnO powder within the above-mentioned compsn. range. |
