| 摘要 |
A novel oxide garnet single crystal, which can be epitaxially grown on a rare earth-gallium garnet wafer and exhibiting excellent performance as a material of magneto-optical devices, is disclosed. The oxide garnet single crystal, grown on the substrate surface by the liquid-phase epitaxial method, has a chemical composition expressed by the formula (BiaEubLn1-a-b)3(Fe1-cMc)5O12, in which Ln is a rare earth element other than europium, e.g., terbium, M is an element selected from the group consisting of aluminum, gallium, indium and scandium, the subscript a is a positive number defined by 0.15</=a</=0.6, the subscript b is a positive number defined by 0.01</=b</=0.2 and the subscript c is a positive number defined by 0.01 </= c.</= 0.1. |
