发明名称 Cyclotron resonance chemical vapor deposition method of forming a halogen-containing diamond on a substrate
摘要 Diamond films or i-carbon films can be formed on a surface by virtue of cyclotron resonance chemical vapor deposition. The characteristics such as transmissivity, conductivity and hardness of the films can be easily controlled by introducing a halogen into the films.
申请公布号 US5145711(A) 申请公布日期 1992.09.08
申请号 US19900481720 申请日期 1990.02.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;HAYASHI, SHIGENORI
分类号 C23C16/26 主分类号 C23C16/26
代理机构 代理人
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