发明名称 |
Cyclotron resonance chemical vapor deposition method of forming a halogen-containing diamond on a substrate |
摘要 |
Diamond films or i-carbon films can be formed on a surface by virtue of cyclotron resonance chemical vapor deposition. The characteristics such as transmissivity, conductivity and hardness of the films can be easily controlled by introducing a halogen into the films.
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申请公布号 |
US5145711(A) |
申请公布日期 |
1992.09.08 |
申请号 |
US19900481720 |
申请日期 |
1990.02.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;HAYASHI, SHIGENORI |
分类号 |
C23C16/26 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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