| 摘要 |
PURPOSE:To improve an opening rate by forming a pixel electrode on an insulating film formed on the entire surface of a switching element, etc., on a substrate, providing a color filter below it, and forming a light shielding part except below the pixel electrode. CONSTITUTION:The insulating film 6 where a thin film transistor (TFT) 3 is not formed and the color filter 11 formed on the end part of the drain electrode 9b of the TFT 3 are obtained by dyeing a resin insulating film. The pixel electrode 12 formed above the color filter 11 and light shielding film 13 is connected electrically to a drain electrode 9b through a contact hole. The light shielding film 13 formed on the nearly entire surface of the TFT 3 and on a bus conductor, etc., is obtained by dyeing a resin insulating film similar to that of the color filter 11 in black. Namely, the switching element, light shielding film 13, and color filter 11 are formed on the same substrate 1, so the need for a margin for a relative position shift generated when this substrate is stuck on another substrate is eliminated. |
