| 摘要 |
PURPOSE:To enable a lead wire to be connected to an electrode external lead- out portion by forming a p-n junction at a semiconductor, forming a reflection- prevention film, performing solder dip and then adhering solder selectively at the electrode external lead-out portion. CONSTITUTION:After a p-n junction is formed on a silicon semiconductor substrate 11, a surface electrode 12 is formed. A tape is applied to an external lead-out portion 13 out of the formed surface electrode 12 for forming a mask 15 for solder dipping. In this state. a reflection-prevention film 16 is formed on an entire surface. After forming the film, the mask 15 is eliminated along with the reflection-prevention film 16 on it, thus enabling the external lead-out portion 13 to be exposed. Then, when solder is dipped, a solder 17 is adhered on the external lead-out portion 13 but no solder 17 is adhered since a portion of a finger 14 is covered with the reflection-prevention film 16, thus enabling a lead wire to be connected to the electrode external lead-out portion 13. |
