| 发明名称 |
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| 摘要 |
<p>An amorphous silicon film forming apparatus forms an amorphous silicon film on a substrate. The apparatus is provided with a sealed vessel whose inside space is defined as a reaction chamber. A gas inlet pipe for introducing a gas containing SiH4 into the reaction chamber is connected to the vessel. A facing electrode provided in the reaction chamber and a power source connected to the facing electrode convert in a plasma generating region the gas introduced into the reaction chamber by the gas inlet pipe into plasma. A conductive mesh structure is disposed in the reaction chamber so as to surround the plasma generating region.</p> |
| 申请公布号 |
JPH0456448(B2) |
申请公布日期 |
1992.09.08 |
| 申请号 |
JP19830081462 |
申请日期 |
1983.05.10 |
| 申请人 |
HIROSE ZENKO;TOSHIBA KK |
发明人 |
HIROSE ZENKO;UENO TAKESHI;SUZUKI KATSUMI |
| 分类号 |
H01L31/0248;C23C16/509;H01J37/32;H01L21/205;H01L31/08;H01L31/20 |
主分类号 |
H01L31/0248 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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