| 摘要 |
In a MOS transistor or memory cell that uses a thin oxide film as a gate insulation film, ion-implantation-induced damage protection films (mask oxide films) are formed on side walls of a polysilicon gate electrode to minimize flaws in the structure of the thin oxide film right under the polysilicon gate electrode edge, which are induced by the ion implantation performed during the process of forming self-aligned source and drain regions.
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