| 摘要 |
PURPOSE:To prevent a reduction in the size of a cell of a DRAM from being limited even if a matching margin is needed for making the connections of storage electrodes with source and drain regions via a striplike conductor film in a MINT structure, which is one kind of the trench capacitor of the cell, and to make it possible to inhibit the effect of a parasitic FET and the effect of a parasitic GCD even if a channel stopper does not exist between a cell plate and the source and drain regions. CONSTITUTION:The connections of storage electrodes 122 with source and drain regions 126 are respectively made via contact holes 124 in the sidewalls of a groove provided in the upper end part of a trench capacitor. P<-> regions 110 respectively exist between N<-> regions 115 constituting one part of a cell plate and the regions 126 and the regions 110 respectively oppose to the electrodes 122 via a silicon oxide film 112 and a capacitor insulating film 116. |
