Mist type dynamic random access memory cell and formation process thereof

摘要

A dynamic random access memory cell having a mixed trenched stacked capacitor, and a formation process therefor are disclosed. The punch-through phenomenon is prevented by providing a difference between the trench depths of the trenched capacitors. The insufficient capacitance of the capacitor having a shallower trench is compensated by making the area of the electrode of the stacked capacitor larger than the area of the electrode of the stacked capacitor of the memory cell having a deeper trenched capacitor. Thus, the coupling phenomenon liable to occur between the stacked capacitors can be prevented, thereby providing a DRAM cell applicable to a ultra large scale integrated circuit.