| 摘要 |
PURPOSE:To enable to obtain a thermally stable SiN film wherein the internal stress hardly varies by controlling temperature and time of the heat treatment of the SiN film produced by sputtering. CONSTITUTION:An integrated circuit substrate 44 which has a SiN film formed by sputtering is supported by a holding device 43 and housed in a transparent case 42. Then, the substrate 44 is illuminated by tangusten halogen lamps 40 provided over the both sides of the substrate 44 and is heat-treated. In this case, the substrate 44 is heat-treated at a temperature of 600-800 deg.C and for a time wherein almost no defect arises in the substrate 44. This enables to obtain the SiN film which is minute and has thermally stable internal stress. |
