| 摘要 |
PURPOSE:To increase the storage capacitance of a semiconductor device having a static capacitor as well as to improve the yield of the device. CONSTITUTION:A semiconductor device is constituted comprising a capacitor Q constituted of a storage electrode 4 formed by providing extendedly conductive fins 4b toward the internal direction and the external direction from the peripheral walls of a bottomed cylinder-shaped conductive film 4a provided on a semiconductor layer (a silicon substrate) 2, a storage electrode 28 formed by extending outside the conductive fins toward the internal direction and the external direction from both sidewalls of the conductive film of a U-shaped section provided on the layer 2 or counter electrode 42 formed into a lattice type section on the layer 2. |
