| 摘要 |
PURPOSE:To manufacture the title fine laminated layer capacity electrode fit for high integration by a method wherein the title manufacturing method is composed or the following three steps, i.e., the first step to form the second rugged insulating film on the first insulating film below the capacity electrode formation region; the second step to form the lower layer electrode on the second insulating film; and the third step to cover the lower layer electrode surface with the third insulating film. CONSTITUTION:Silicon oxide films 107 are formed in the separating regions on a single crystal substrate 101 and then an interlayer insulating film 102 is deposited. Next, a rugged surfaced silicon oxide film 103 is deposited on the surface. Next, a capacity contact 104 is formed. Next, a polycrystal silicon film 105 having the surface corresponding to the rugged surface of the silicon oxide film 103 is deposited to form a lower layer electrode in laminated layer capacity. Next, a charge accumulated electrode 106 to be the lower layer electrode in the laminated layer capacity is formed. Next, a capacity insulating film 108 and a plate electrode 109 to be the upper layer electrode in accumulated capacity are successively formed to complete the title laminated layer capacity electrode. Resultantly, the rugged surface electrode can be provided with a specific capacity value in less dispersion. |
