发明名称 |
Circuit for generating internal supply voltage |
摘要 |
An internal supply voltage generator receiving an external supply voltage, generates a stable, constant internal supply voltage to be applied to a semiconductor memory device regardless of the variation of the temperature. For this end, the generator includes a voltage sharing circuit (80) which has a first variable resistor (R1') with higher resistance as a load element and a second variable resistor (R2') with lower resistance as a driving element. As the temperature increases, the resistance of the first variable resistor (R1') increases, thereby decreasing the current flow formed therethrough. Then, the comparator (60) connected to the output of the voltage sharing circuit (80) allows the output circuit (70) to increase the internal supply voltage, in response to increase of the temperature.
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申请公布号 |
US5146152(A) |
申请公布日期 |
1992.09.08 |
申请号 |
US19910724796 |
申请日期 |
1991.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JIN, TAE-JE;JEON, JOON-YOUNG |
分类号 |
G06F1/26;G05F1/46;G05F1/56;G05F1/567;G05F3/02;G05F3/24;G05F3/30;G11C5/14;G11C11/407;G11C11/4074;G11C11/413;H03F1/30;H03K19/00 |
主分类号 |
G06F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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