| 摘要 |
<p>PURPOSE:To make the height of a bump uniform when the bump is plating- formed on a bonding pad for an IC, by a method wherein a conductive film for plating is formed on the whole surface of the wafer with a polymide film as a passivation film remaining on the scribe line on the semiconductor wafer. CONSTITUTION:An insulating film 2 is formed on a semiconductor silicon substrate 1. The semiconductor silicon substrate 1 is exposed with etching to form a scribe line. A metallic wiring 3 is formed on the insulating film 2, and, then, a first passivation film 4 is formed on the whole surface. An opening is formed on the metallic wiring 3, and the first passivation film 4 is removed within the scribe line. Then, the second passivation film is formed, and an opening 4 is formed on the metallic wiring 3. In this instance a conductive film 6 with approx. uniform thickens can be formed on this film 5 so as to leave the second passivation film 5 within the scribe line. Then after an opening is formed on the metallic wiring 3, a bump 8 is plate-formed within the opening by feeding current to the conductive film 6.</p> |
