POLYSILICON THIN FILM SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide a polysilicon thin film semiconductor device improved characteristics by reducing crystal grain boundaries by increasing the grain size of silicon crystalline grains and reducing the density of number of silicon dangling bonds in the boundaries. CONSTITUTION:A polysilicon thin film semiconductor device contains nitrogen in a channel layer in a semiconductor device using a polysilicon thin film as the channel layer, and has a maximum value in a depth direction distribution of its content at a boundary side of the layer and a substrate.