发明名称 DEVICE SEPARATION STRUCTURE AND SEMICONDUCTOR DEVICE IMPROVED IN WIRING STRUCTURE
摘要 A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region. <IMAGE>
申请公布号 EP0460861(A3) 申请公布日期 1992.09.02
申请号 EP19910304866 申请日期 1991.05.29
申请人 CANON KABUSHIKI KAISHA 发明人 ISHIZUKA, KEIJI;KATAOKA, YUZO;ICHISE, TOSHIHIKO;TAKAHASHI, HIDEKAZU;OHZU, HAYAO
分类号 H01L21/74;H01L21/761;(IPC1-7):H01L21/76 主分类号 H01L21/74
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