| 摘要 |
The present invention relates to methods of making a compound semiconductor device having a high performance self-aligned LDD structure which has stable characteristics, and is suitable for high integration and high yield, in which after forming a channel layer (20) beneath the substrate surface, using a high performed self-aligned technology, a gate electrode (14), lightly doped layers (21) and heavily doped layers (22) are formed in predetermined positions by a photolithographic process for the gate portion. This photolithographic process is performed only once, therefore, each pattern can be formed with excellent accuracy and reproducibility. <IMAGE>
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