发明名称 |
Fabrication of GaAs devices with doped regions and devices so produced. |
摘要 |
<p>High carrier concentration, as well as abrupt change in such concentration in GaAs-based devices, is the consequence of selection of tin dopant-containing precursor compounds as used during layer growth. Alkyl tin compounds, as used during MetalOrganic Molecular Beam Epitaxy, are of particular value in the growth of pnp heterojunction bipolar transistors, likely in conjunction with other devices in large scale integrated circuits.</p> |
申请公布号 |
EP0501684(A2) |
申请公布日期 |
1992.09.02 |
申请号 |
EP19920301436 |
申请日期 |
1992.02.21 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
ABERNATHY, CAMMY RENEE;REN, FAN |
分类号 |
H01L21/203;H01L21/205;H01L21/331;H01L29/205;H01L29/207;H01L29/73;H01L29/737 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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