发明名称 Dynamic BiCMOS logic gates
摘要 A dynamic logic gate includes a precharge device for precharging the logic gate in synchronism with a clock; a partial logic gate arranged such that, depending on the logic states of the logic inputs, current is allowed to flow between its two terminals or is cut off; a bipolar transistor whose emitter is grounded, and a discharge device for discharging the charge stored in the base of the bipolar transistor during the precharge period. The logic gate speeds up the logic operation by suddenly discharging the load capacity of the circuitry by supplying the conducting current of the partial logic gate to the bipolar transistor base and using the high speed current amplification action of the bipolar transistor.
申请公布号 US5144163(A) 申请公布日期 1992.09.01
申请号 US19900631283 申请日期 1990.02.20
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MATSUZAWA, AKIRA;NAKASHIMA, SHOTA;YAMADA, HARUYASU
分类号 H03K19/0944;H03K19/096 主分类号 H03K19/0944
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