| 摘要 |
Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. There organometallic copper complexes are represented by the structural formula: <IMAGE> wherein R1 and R3 are each independently C1-C8 perfluoroalkyl, R2 is H, F or C1 -C8 perfluoroalkyl, R4 is H, C 1 -C8 alkyl, or Si(R6)3, each R5 is independently H or C1 -C8 alkyl and each R 6 is independently phenyl or C1 -C8 alkyl. A process for depositing copper films using these organometalic copper complexes is also provided.
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