SEMICONDUCTOR MEMORY DEVICE HAVING AN OHMIC CONTACT BETWEEN AN ALUMINIUM-SILICON ALLOY METALIZATION FILM AD A SILICON SUBSTRATE

摘要

A semiconductor memory device includes a memory cell portion and a peripheral circuit portion which are provided on a silicon substrate (11). The peripheral circuit portion includes an insulation film (17) having a contact hole (33, 34) formed on the silicon substrate, a barrier layer (50, 60) formed in the contact hole having a layer structure which is the same as that of a metallization film (40) provided in the memory cell portion and which is formed at the same time as forming the first metallization film. The above layer structure includes a polysilicon film (21) and a metal silicide film (22). A metallization film (29, 30) of an alloy of aluminum and silicon overlies the barrier layer (50, 60) in the contact hole (33, 34).